The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 1989
Filed:
Jul. 28, 1987
Applicant:
Inventors:
Masahiko Kitagawa, Tenri, JP;
Yoshitaka Tomomura, Nara, JP;
Satoshi Yamaue, Nara, JP;
Shigeo Nakajima, Nara, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ; H01L / ;
U.S. Cl.
CPC ...
156610 ; 156609 ; 156612 ; 437 81 ; 437104 ;
Abstract
A method for the growth of a compound semiconductor crystal using the sublimation method or the halogen transportation method, comprising maintaining the temperature of a limited portion of the crystal, which has just begun to grow, at a higher level than that of the crystal growth temperature, thereby attaining control of the crystallinity of the crystal at the initial growth stage, and an apparatus for the said method.