The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 1989
Filed:
Mar. 24, 1988
Applicant:
Inventors:
Kazuhiko Inoue, Yokohama, JP;
Toru Suga, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 15 ; 357 68 ; 357 53 ;
Abstract
A MESFET device includes a semi-insulative substrate, a source region, a drain region, a channel region, a source electrode, a drain electrode, a gate electrode, and a gate-electrode pad. The source region, drain region, and the channel region are formed in a surface region of the substrate. The three electrode and the gate-electrode pad are formed on the substrate. The MESFET device further comprises a conductive layer formed on the substrate and surrounds the source electrode and the gate-electrode pad. The conductive layer is connected to the drain electrode.