The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 1989

Filed:

Jul. 08, 1987
Applicant:
Inventors:

Toshihide Ujihara, Hitachi, JP;

Shuroku Sakurada, Katsuta, JP;

Tadashi Sakaue, Hitachi, JP;

Shuji Musha, Hitachi, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 38 ; 357 20 ; 357 36 ; 357 37 ; 357 40 ; 357 68 ;
Abstract

A gate turn-off (GTO) thyristor has a plurality of unit GTO thyristors of strip-like configuration in a same semiconductor substrate, each unit GTO thyristor being constructed of an N emitter layer, P base layer, N base layer and P emitter layer. The P base and N base layers are shared in common for all the unit GTO thyristors which are formed in a multi-ring configuration. The exposed area of the P emitter layer of a unit GTO thyristor located far from the gate signal input area is made smaller than that of the P emitter layer of a unit GTO thyristor located relatively closer to the gate signal input area.


Find Patent Forward Citations

Ujihara, Toshihide. (1989). Gate turn-off thyristor of multi-emitter type (U.S. Patent No. 4868625). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4868625

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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