The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 1989
Filed:
Sep. 16, 1987
Applicant:
Inventor:
Atsushi Kamata, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 17 ; 357 16 ; 357 63 ; 357 61 ;
Abstract
A semiconductor light emitting device is disclosed which comprises a compound semiconductor substrate, an n type ZnS.sub.x Se.sub.1-x crystal layer (0.ltoreq.x.ltoreq.1) formed on the substrate and containing a Group VII element as a donor impurity, and a p type ZnS.sub.y Se.sub.1-y crystal layer (0.ltoreq.y.ltoreq.1) formed on the n type crystal layer and containing a Group I element as an acceptor impurity, where a pn junction is formed between the n type crystal layer and the p type crystal layer.
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Kamata, Atsushi. (1989). Semiconductor light emitting device using group i and group vii dopants (U.S. Patent No. 4868615). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4868615
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile