The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1989
Filed:
Jan. 06, 1989
Harold S Crafts, Fort Collins, CO (US);
Mark Q Scaggs, Fort Collins, CO (US);
NCR Corporation, Dayton, OH (US);
Abstract
A high frequency integrated circuit channel capacitor structure comprised of interdigitated field effect transistor gate electrodes and source/drain regions of minimum dimension and respective common connection. The multiplicity of parallel connected capacitive regions between the polysilicon gate electrode and a channel region in the substrate provide precisely controlled capacitors with exceptionally low resistance. Metallization contacts to the gate polysilicon and source/drain regions at each interleaved pattern, together with minimum channel length dimensions, minimizes the capacitive resistance. A CMOS configuration is also feasible.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile