The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1989
Filed:
Jan. 04, 1989
Applicant:
Inventors:
Paul M Solomon, Yorktown Heights, NY (US);
Thomas N Theis, Croton-on-Hudson, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 16 ; 357 58 ; 357 56 ; 357 231 ; 357 2315 ;
Abstract
A field effect transistor comprising a semiconductor channel region; an undoped semiconductor material region adjacent the channel region; a second semiconductor material region separated from the channel region; and a region of semiconductor material adjacent the second region and having a narrower band gap than the band gap of the region adjacent the channel region; and ohmic contact means to the region having the narrower band gap.
Solomon, Paul. (1989). Heterojunction field effect transistor having gate threshold voltage (U.S. Patent No. 4866491). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4866491
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile