The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1989
Filed:
Sep. 28, 1987
Tomohiro Itoh, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A field effect transistor comprises a gate electrode applied with a gate voltage, a channel forming region forming a channel in response to the gate voltage, and source and drain regions formed on both sides of the channel forming region, respectively, the channel forming region being made of a semiconductor material having an electron affinity which decreases as the distance from one surface thereof increases. The channel is formed at the surface of the channel forming region. An additional semiconductor material having an electron affinity lower than the electron affinity at the surface of the channel forming region may be interposed between the gate electrode and the channel forming region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile