The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1989
Filed:
Feb. 19, 1987
Yukio Takasaki, Kawasaki, JP;
Tatsuo Makishima, Mitaka, JP;
Kazutaka Tsuji, Hachioji, JP;
Tadaaki Hirai, Koganei, JP;
Eisuke Inoue, Mobara, JP;
Yasuhiko Nonaka, Mobara, JP;
Naohiro Goto, Machida, JP;
Masanao Yamamoto, Mobara, JP;
Keiichi Shidara, Tama, JP;
Kenkichi Tanioka, Tokyo, JP;
Takashi Yamashita, Sagamihara, JP;
Tatsuro Kawamura, Tama, JP;
Eikyuu Hiruma, Komae, JP;
Shirou Suzuki, Yokosuka, JP;
Masaaki Aiba, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Nippon Hoso Kyokai, Tokyo, JP;
Abstract
A target of an image pickup tube, having a transparent substrate, a transparent conductive film, a p-type photoconductive film made mainly from amorphous Se, and an n-type conductive film capable of forming a rectifying contact at the interface with the p-type photoconductive film, using the rectifying contact as a reverse bias, characterized in that the p-type photoconductive film containing at least a region having more than 35%, and to 60% by weight of Te in the film thickness direction, and at least a region containing 0.005 to 5% by weight of at least a material capable of forming shallow levels in the amorphous Se in the film thickness direction, has good after-image characteristics even if operated at a high temperature.