The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 1989

Filed:

Jan. 15, 1987
Applicant:
Inventors:

Ching-Te K Chuang, South Salem, NY (US);

Edward Hackbarth, White Plains, NY (US);

Denny D Tang, Pleasantville, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365155 ; 365179 ;
Abstract

This invention relates generally to Static Random Access Memory (SRAM) cells and more particularly, relates to a SRAM cell wherein soft-error due to .alpha.-particle radiation is reduced by permitting the potential at the common-emitter node of the cross-coupled transistors of the memory cell to swing freely. Still more particularly, it relates to a SRAM cell wherein the common-emitter node of the cell is decoupled from a heavily capacitively loaded word line with its common constant current source by means of a constant current source or current mirror disposed in each cell between the common-emitter node and the word line.


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