The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 1989
Filed:
Nov. 13, 1987
Applicant:
Inventors:
John C Fan, Chestnut Hill, MA (US);
Jhang W Lee, Mansfield, MA (US);
Jagdish Narayan, Raleigh, NC (US);
Assignee:
Kopin Corporation, Taunton, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 22 ; 148D / ; 148D / ; 148D / ; 148D / ; 437 26 ; 437 82 ; 437126 ; 437108 ; 437132 ; 437 80 ; 437973 ; 156603 ; 156610 ;
Abstract
A method for reducing the defect and dislocation density in III-V material layers deposited on dissimilar substrates is disclosed. The method involves ion implantation of dopant materials to create amorphous regions within the layers followed by an annealing step during which the amorphous regions are recrystallized to form substantially monocrystalline regions. The wafers produced by the process are particularly well suited for optoelectronic devices.