The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 1989
Filed:
May. 18, 1988
Applicant:
Inventor:
Hansjorg Reichert, Munich, DE;
Assignee:
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156628 ; 156643 ; 156657 ; 1566591 ; 1566611 ; 437228 ; 437240 ; 437241 ;
Abstract
A geometrically accurate transfer with low manufacturing tolerances is made possible by a method for transferring superfine photoresist structures into a dielectric layer. A photoresist mask is provided on the dielectric layer. This mask is used in a subsequent ion implantation. The implantation is carried out under such circumstances that neither the resist mask nor the dielectric layer which is to be structured is got through by the incident ion beam.
Reichert, Hansjorg. (1989). Method for transferring superfine photoresist structures (U.S. Patent No. 4863556). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4863556
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile