The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1989
Filed:
Oct. 04, 1988
Applicant:
Inventor:
Shinji Morozumi, Suwa, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357 237 ; 357 41 ; 357 42 ;
Abstract
A solid state image sensor including a plurality of sensing cells, each formed of a switching transistor and a thin film sensing device, arranged in a line or a matrix. The switching transistor is a thin film transistor (TFT) of polycrystalline silicon and the thin film sensing device utilizes a layer of amorphous silicon formed on a lower electrode which is electrically connected to the drain of the switching.