The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1989
Filed:
Sep. 22, 1986
Applicant:
Inventor:
Han-Sheng Lee, Troy, MI (US);
Assignee:
General Motors Corporation, Detroit, MI (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 231 ; 357 49 ; 357 50 ; 357 42 ; 357 233 ;
Abstract
A high temperature logic field effect transistor. By surrounding the source and drain pn junctions with electrically insulative material, except where a channel runs between the source and drain, a logic field effect transistor whose on/off current ratio can still have a high value at high temperatures. The transistor can be of any standard MOS technology, such as pMOS, nMOS, or CMOS.