The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1989
Filed:
Mar. 31, 1988
Applicant:
Inventors:
Claude Carriere, Marcoussis, FR;
Jean Renard, Paris, FR;
Thierry Lavolee, Sainte Genevieve Des Bois, FR;
Assignee:
Societe Anonyme dite: ALCATEL CIT, Paris, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23F / ;
U.S. Cl.
CPC ...
156643 ; 156647 ; 156664 ;
Abstract
A wafer of indium phosphide is disposed between two electrodes (102, 104) in a heated enclosure (100) into which ducts (110 and 112) admit nitrogen and ammonia. A high frequency electricity generator (108) forms a plasma between the electrodes which etches the exposed surface of the wafer. The invention is applicable, in particular, to forming semiconductor lasers emitting in the infrared for telecommunications purposes.