The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 1989
Filed:
May. 28, 1987
Applicant:
Inventors:
John C Bean, New Providence, NJ (US);
Leonard C Feldman, Berkeley Heights, NJ (US);
Anthony T Fiory, Summit, NJ (US);
Assignee:
American Telephone and Telegraph Company, AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
148 334 ; 148D / ; 148D / ; 148D / ; 148D / ; 148D / ; 156610 ; 156612 ; 156D / ; 156D / ; 156D / ; 357 16 ; 437106 ; 437110 ; 437131 ;
Abstract
A molecular beam epitaxy method of growing Ge.sub.x Si.sub.1-x films on silicon substrate is described. Semiconductor heterostructures using Ge.sub.x Si.sub.1-x layers grown on either Ge or Si substrates are described.