The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1989
Filed:
May. 17, 1988
Masahiro Hosoda, Nara, JP;
Kazuaki Sasaki, Yao, JP;
Masaki Kondo, Tenri, JP;
Saburo Yamamoto, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor laser device comprising a substrate; a current blocking layer disposed on the substrate; a striped channel formed in a manner to reach the substrate through the current blocking layer; a striped mesa disposed on the area of the V-channel, the striped mesa being of a multi-layered crystal that is composed of a first cladding layer, an active layer, a second cladding layer, and a protective layer in that order; and burying layers having at least one of the following two, a pn-reverse bias junction and a high resistant crystal, the burying layer being formed on both sides of the striped mesa, wherein the protective layer is made of Ga.sub.1-x Al.sub.x As (x>O).