The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1989
Filed:
Aug. 04, 1987
Applicant:
Inventors:
Toshiro Hayakawa, Nara, JP;
Takahiro Suyama, Tenri, JP;
Kohsei Takahashi, Tenri, JP;
Masafumi Kondo, Tenri, JP;
Saburo Yamamoto, Nara, JP;
Assignee:
Sharp Kabushiki Kaisha, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 45 ;
Abstract
In a semiconductor laser device comprising In(Ga.sub.1-x Al.sub.x)P cladding layers and an active region which has one or more In(Ga.sub.1-y Al.sub.y)P (y<x) quantum well layers and which is sandwiched by said cladding layers, superlatticed structures having an altervative lamination of In(Ga.sub.1-x Al.sub.x)P layers and In(Ga.sub.1-y Al.sub.y)P layers are disposed in contact with said cladding layers and/or said quantum well layers.