The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1989
Filed:
Sep. 23, 1987
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Abstract
A plasma processing apparatus performs various plasma processings of a substrate having a large area in a semiconductor element manufacturing process, by using highly excited plasma generated at a low pressure under the application of RF power and a magnetic field. In this plasma processing apparatus, a gas is introduced into a vacuum chamber to be used as an ion source, RF power is applied to two electrodes having respective surfaces opposite to each other through the gas to thereby generate the plasma in the vacuum chamber, and a magnetic field is applied to the plasma from a magnetic field source arranged at a predetermined position. The intensity of the applied magnetic field is set to be 1.5 times or more the magnetic field intensity which causes electron cyclotron resonance to occur at the frequency f of the applied RF power. Particularly, when the frequency f of the RF power is 13.56 MHz, the magnetic field intensity is selected to be in the range from 25 gausses to 35 gausses.