The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1989
Filed:
Mar. 13, 1987
Wilhelmus J Josquin, Eindhoven, NL;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of manufacturing an integrated circuit is set forth comprising a field effect transistor having an insulated gate (35) and a further circuit element having a first (9) and a second electrode zone (14) of opposite conductivity types. Simultaneously with the gate (35) a conductive pattern (11) separated by an insulating layer (34) from the first electrode zone (9) is provided on the first electrode zone (9). This pattern (11) provides a pair of the edge of the doping opening (12) for the second electrode zone (14). A second insulating layer (16) is provided on the pattern (11) and is removed locally by anisotropic etching in such a manner that in the doping opening (12) edge portions (17) (16) are left. Subsequently, a conductive layer (22) for connection of the second electrode zone (14) is provided, which extends over the second insulating layer (16), over the pattern (11) and over the edge portions (17) (16 ) into the opening (12) of reduced size and on the second electrode zone (14). The contact opening for the second electrode zone (14) can thus be derved without alignment tolerance from the doping opening (12).