The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 1989

Filed:

Jun. 03, 1988
Applicant:
Inventors:

Tsutomu Nomoto, Tokyo, JP;

Mamoru Yosida, Tokyo, JP;

Mikio Mouri, Tokyo, JP;

Tsukasa Watanabe, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 40 ; 437937 ; 437235 ; 437238 ; 437241 ; 437941 ; 437 41 ; 357 237 ;
Abstract

In a thin-film transistor fabrication process using an amorphous silicon semiconductor layer, after the gate insulation layer is formed and before the a-Si semiconductor layer is formed, the surface of the gate insulation layer is treated with an H.sub.2 plasma. This treatment improves the transistor characteristics.


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