The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 1989
Filed:
Jul. 14, 1986
Applicant:
Inventor:
Masaaki Kinugawa, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 42 ; 357 231 ; 357 233 ; 357 60 ;
Abstract
A monocrystalline silicon substrate having a (110) crystal plane is prepared. A CMOS transistor is formed on this substrate. An N channel MOS transistor and a P channel MOS transistor are formed in the surface of the semiconductor substrate. In each of these transistors the channel length is 1.5 .mu.m or less and the velocity saturation phenomenon of electrons is outstanding.