The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 1989
Filed:
Dec. 28, 1987
Applicant:
Inventors:
Motoyuki Yamamoto, Kanagawa, JP;
Yasuhiko Tsuburai, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 81 ; 148D / ; 148D / ; 148D / ; 148D / ; 148D / ; 148D / ; 156613 ; 372 48 ; 437 96 ; 437129 ; 437133 ; 437167 ; 437949 ; 437971 ; 437987 ;
Abstract
A method of manufacturing a semiconductor light emitting device by forming a compound semiconductor structure with homo- or heterojunction therein having a first p-type compound semiconductor crystal layer at the top of the structure, growing a second p-type compound semiconductor crystal layer on the structure in a reactor, wherein, before the beginning of the crystal growth step, a p-type dopant is caused to flow into the reactor in which the structure is placed. In some embodiments, the flow of the p-type dopant continues after the completion of the crystal growth.