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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4855119 B1

PDFFull Text
Date of Patent:
Aug. 08, 1989

Filed:

Sep. 15, 1988

Method of manufacturing silicon carbide whisker

Applicant:
Inventors:

Hajime Minamikata, Shizuoka, JP;

Toshiaki Kanno, Shizuoka, JP;

Masahiro Kanda, Shizuoka, JP;

Hitoshi Ushijima, Shizuoka, JP;

Assignee:

Yazaki Corporation, , JP;

Attorney:

Wigman & Cohen

Primary Examiner:

John Doll

Assistant Examiner:

Lori S Freeman

Int. Cl.
CPC ...
C01B / ;
U.S. Cl.
CPC ...
423346 ; 423345 ;
Abstract

A method for manufacturing a silicon carbide whisker comprising heating a reaction zone to a temperature in the range of 1,000.degree. C. to 1,200.degree.; supplying a reducing or inactive gas and a sulfur-containing organic siloxane compound; thermally decomposing in vapor phase to react silicon and carbon contained in the sulfur-containing organic siloxane compound by a gaseous phase reaction and recovering a silicon carbide whisker, characterized in that the sulfur promotes the reaction between the silicon and the carbon.

Find Patent Forward Citations

Minamikata, Hajime. (1989). Method of manufacturing silicon carbide whisker (U.S. Patent No. 4855119). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4855119

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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