The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 1989

Filed:

Dec. 24, 1987
Applicant:
Inventors:

Osamu Hattori, Tokyo, JP;

Anton Yasaka, Tokyo, JP;

Yoshitomo Nakagawa, Tokyo, JP;

Mitsuyoshi Sato, Tokyo, JP;

Sumio Sasaki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K / ;
U.S. Cl.
CPC ...
20419233 ; 20419234 ; 204298 ; 156345 ; 156626 ; 156627 ; 156635 ; 156643 ; 2504921 ;
Abstract

The present invention relates to an apparatus for repairing a pattern film of a photomask, reticle, X-ray mask, semiconductor, etc. In the apparatus, a focused ion beam is applied to an excess portion of a pattern film which is formed on a substrate. The excess portion of the pattern film is removed by means of ion sputtering. For repairing an excess portion of the pattern film, an etching gas is provided to a position that is being irradiated with the scanning focused ion beam thereby increasing the reliability of repairing and carrying out repair of the excess portion of the pattern film with good quality. Further, the removal speed of the excess portion film is improved.


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