The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 1989

Filed:

Jul. 29, 1987
Applicant:
Inventors:

David P Jones, St. Asaph, GB;

Kevin Mullaney, Rhyl, GB;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B / ; G02B / ;
U.S. Cl.
CPC ...
350-16 ; 350164 ;
Abstract

The article, typically for use in man-made satellites, has high emissivity and low reflectance in the thermal infra-red wavebands between 6 and 30 microns, and also in the visible wavebands. The article is employed either to cover individual solar-cells, thereby protecting the cells from ionizing radiation and micro-meteoroids, and to protect the adhesive bonding the article to the solar cell from u-v light, or as a thermal control mirror to prevent heat build-up. The article has good emissivity in the thermal waveband regions, so the cell can be maintained at a relatively low temperature. The article employs a high internal stress material and a preferred embodiment comprises a glass substrate having a high emissivity coating comprising a stack of multiple relatively thin alternate layers of dysprosium fluoride and silicon oxide disposed immediately adjacent the substrate, and on the other hand, disposed above these layers, remote from the substrate, an anti-reflection coating comprising alternate layers of erbium oxide and dysprosium fluoride and an upper layer of silicon oxide.


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