The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 1989
Filed:
Apr. 27, 1988
Applicant:
Inventor:
Howard Q Vo, San Jose, CA (US);
Assignee:
Litton Systems, Inc., Beverly Hills, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F / ;
U.S. Cl.
CPC ...
330277 ; 330286 ; 330289 ; 330293 ;
Abstract
An amplifier includes a single-gate FET and a dual gate FET in parallel interconnection. A temperature sensing circuit supplies a temperature-dependent bias voltage to the G.sub.2 gain control gate of the dual gate FET to counteract the temperature-dependence of the amplifier FETs thereby providing gain stability in the presence of temperature variations.
Vo, Howard. (1989). Temperature compensated high gain fet amplifier (U.S. Patent No. 4849710). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4849710
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile