The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 1989

Filed:

Feb. 22, 1988
Applicant:
Inventor:

Yoshio Okada, Tokyo, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
3072964 ; 3072721 ; 307443 ; 307592 ; 307100 ; 3072965 ; 3072723 ;
Abstract

A semiconductor device having an input protection circuit is disclosed. The semiconductor device includes a power-on reset circuit which generates a pulse having a pulse width determined according to an input surge, applied to an input terminal when an input voltage has risen to a preset level. In response to a pulse generated by the power-on reset circuit, a CMOS inverter supplies a predetermined voltage to the base of a bipolar transistor and controls the bipolar transistor so that it clamps an input voltage supplied thereto to a voltage level lower than the withstanding voltage of the internal circuit in a period corresponding to the pulse width. Thus, the input protection circuit constituted by the bipolar transistor clamps an input voltage, supplied by the input terminal to the internal circuit, to a predetermined level. In this invention, the control circuit activates the bipolar transistor at the time the input voltage rises and keeps it active while the power-on reset circuit is generating a pulse, causing an input surge to be bypassed through the bipolar transistor, during this period of time. Thus, the input voltage can be clamped to a level lower than the withstanding voltage of the internal circuit, protecting the internal circuit, even when a surge voltage higher than the withstanding voltage is generated.


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