The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 1989
Filed:
Apr. 21, 1988
Applicant:
Inventors:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
148 131 ; 148 13 ; 437903 ; 428641 ;
Abstract
The thermoelectric conversion efficiency of a GaP dope SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200.degree. C. to 1275.degree. C. in air to form large grains having a size over 50 .mu.m and to form a Ge-Ga-P rich phase and a silicon rich phase containing SiP and SiO.sub.2 particles.