The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1989
Filed:
May. 19, 1987
Applicant:
Inventors:
Deva N Pattanayak, Schenectady, NY (US);
Bantval J Baliga, Schenectady, NY (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 38 ; 357 234 ; 357 2314 ; 357 43 ; 357 86 ;
Abstract
A monolithically integrated semiconductor device preferably comprising a thyristor driven transistor is disclosed. The thyristor provides a base drive sufficient to fully turn-on an inherent bipolar transistor and achieve the maximum benefit of bipolar conduction within the semiconductor device. The thyristor can be turned on and off through insulated gate control by decoupling the emitter region of the thyristor from the cathode electrode of the device.
Pattanayak, Deva. (1989). Monolithically integrated insulated gate semiconductor device (U.S. Patent No. 4847671). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4847671
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile