The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1989
Filed:
Mar. 31, 1988
Applicant:
Inventor:
Ranjit S Mand, Nepean, CA;
Assignee:
Northern Telecom Limited, Montreal, CA;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 16 ; 357 19 ; 357 56 ; 357 55 ; 357 30 ; 372 50 ; 350 9612 ;
Abstract
In the monolithic integration of HFET and DOES devices, a wide band gap carrier confining semiconductor layer is provided only at predetermined locations where DOES devices are desired. This layer is not provided at other predetermined locations where HFET devices are desired as it would constitute a shunt path which would degrade the high frequency operation of the HFET devices. The invention is particularly useful where monolithic integration of optical sources, optical detectors, and electronic amplifying or switching elements is desired.