The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 1989

Filed:

Feb. 24, 1986
Applicant:
Inventor:

Derek Aitken, East Molesey, GB;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J / ; H01J / ;
U.S. Cl.
CPC ...
2504922 ; 2504921 ; 2504 / ;
Abstract

A system for implanting ions into a target element including a source arrangement for producing an ion beam; a beam analyzing arrangement for receiving the ion beam and selectively separating various ion species in the beam on the basis of mass to produce an analyzed beam; and a beam resolving arrangement disposed in the path of the analyzed beam for permitting a preselected ion species to pass to the target element. The analyzing arrangement has an ion dispersion plane associated therewith. The source arrangement has an associated ion emitting envelope including an area of substantial extension in a plane parallel to the ion dispersion plane and producing ions entering said analyzing arrangement which are travelling substantially either toward or from a common apparent line object lying in a plane perpendicular to the ion dispersion plane.


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