The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1989
Filed:
Oct. 31, 1988
Kenichi Hanaki, Kariya, JP;
Hitomi Kitagawa, Okazaki, JP;
Takayuki Tominaga, Okazaki, JP;
Tadashi Hattori, Okazaki, JP;
Nippon Soken, Inc., Nishio, JP;
Abstract
A method for forming a SiC film having a wide optical energy gap and a high conductivity, which is capable of being stacked on a substrate of a large area uniformly. The SiC film is formed by supplying a material gas composed of monosilane gas, methane gas, diboran gas and hydrogen gas and having a hydrogen dilution ratio of about 144 and carbon mixing ratio of about 0.35, to the substrate, and supplying rf power of 60 to 270W(rf power density=80 to 350mW/cm.sup.2) under a gas pressure of 0.2 torr at a substrate temperature of 220.degree. C. The obtained film exhibits high dark-conductivity of 10.sup.-6 Scm.sup.-1 or more, and a Raman spectrum light thereof peaks at around 520 cm.sup.-1.