The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 1989
Filed:
May. 07, 1988
Takashi Ogata, Shizuoka, JP;
Yamaha Corporation, Hamamatsu, JP;
Abstract
For preventing a semiconductor substrate from a heat attack, a method of rapid annealing using a lamp unit for a heat radiation comprises the step of preparing a semiconductor substrate having a multiple-layer structure and a vessel having an annealing chamber where the lamp unit is placed, the vessel is associated with an inert gas supplying system operative to supply a high-pressure inert gas to the annealing chamber, and the above step is followed by the steps of placing the semiconductor substrate in the annealing chamber, supplying the high-pressure inert gas to the annealing chamber so as to create a high-pressure inert ambient within a predetermined range and activating the lamp unit for the heat radiation so as to heat up the semiconductor substrate, so that the heat radiation is decreased in intensity by virtue of the high-pressure inert ambient.