The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 1989
Filed:
Mar. 28, 1988
Applicant:
Inventor:
Haruo Sunakawa, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 81 ; 148D / ; 148D / ; 148D / ; 156613 ; 357 232 ; 437111 ; 437126 ; 437912 ; 437965 ;
Abstract
An n-type III-V compound semiconductor comprises a plurality of monolayers of III-V compound semiconductor molecules having a layer-by-layer structure of group III element and group V element laminated alternately, and a group VI element-doped monolayer. The group VI element-doped monolayer is inserted into the III-V compound semiconductor molecules by occupying lattice points which were occupied by the group V element. The layers of the semiconductor are grown by Atomic Layer Epitaxy process.
Quick Actions:
Sunakawa, Haruo. (1989). Doping iii-v compound semiconductor devices with group vi monolayers (U.S. Patent No. 4845049). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4845049
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile