The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 1989
Filed:
Mar. 15, 1988
Applicant:
Inventors:
Yuzaburo Ban, Osaka, JP;
Hiraaki Tsujii, Nara, JP;
Youichi Sasai, Hirakata, JP;
Mototsugu Ogura, Takaichi, JP;
Hiroyuki Serizawa, Hirakata, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; B05D / ;
U.S. Cl.
CPC ...
437129 ; 148D / ; 148D / ; 148D / ; 148D / ; 148 336 ; 156613 ; 156649 ; 156662 ; 357 17 ; 372 48 ; 372 50 ; 437133 ; 437173 ; 437935 ; 437936 ; 437963 ;
Abstract
Disclosed is a method of fabricating a compound semiconductor device which is capable of forming a multi-wavelength semiconductor laser structure, double cavity type semiconductor laser structure, stripe type semiconductor laser structure transverse junction stripe type semiconductor laser structure, or semiconductor grating by a single step of epitaxial growth while illuminating a desired part of substrate surface selectively with light at the time of epitaxial growth.