The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 1989
Filed:
Apr. 08, 1988
Santokh S Badesha, Pittsford, NY (US);
Paul Cherin, Fairport, NY (US);
Geoffrey M Foley, Fairport, NY (US);
Barry A Lees, Fairport, NY (US);
John Wozniak, Webster, NY (US);
Xerox Corporation, Stamford, CT (US);
Abstract
A process for fabricating an electrophotographic imaging member is disclosed comprising providing in a vacuum chamber at least one crucible containing particles of an alloy comprising selenium and an alloying component selected from the group consisting of tellurium, arsenic, and mixtures thereof, providing a substrate in the vacuum chamber, applying a partial vacuum to the vacuum chamber, and rapidly heating the crucible to a temperature between about 250.degree. C. and 450.degree. C. to deposit a thin continuous selenium alloy layer on the substrate. A plurality of selenium containing layers may be formed by providing in a vacuum chamber at least one first layer crucible containing particles of selenium or a sellenium alloy, at least one second layer crucible containing particles of an alloy comprising selenium, and a substrate, applying a partial vacuum to the vacuum chamber, heating the particles in the first layer crucible to deposit a thin continuous selenium or a selenium alloy first layer on the substrate, maintaining the particles in the second layer crucible at a first temperature below about 130.degree. C. while the thin continuous selenium or a selenium alloy first layer is being deposited on the substrate, and rapidly heating the particles in the second layer crucible to a second temperature between about 250.degree. C. and about 450.degree. C. to deposit a thin continuous selenium alloy second layer on the substrate.