The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 1989
Filed:
Sep. 29, 1987
Applicant:
Inventors:
Donald L Smith, Palo Alto, CA (US);
Andrew S Alimonda, Los Altos, CA (US);
Assignee:
Xerox Corporation, Stamford, CT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D / ; B05D / ;
U.S. Cl.
CPC ...
427 39 ; 427402 ;
Abstract
A method of depositing a delamination bubble-free PECVD thin film n+ amorphous silicon layer, from the decomposition of a gaseous mixture of silane and phosphine, upon a substrate having one or more thin film layers thereon, wherein there is contamination upon the exposed surface of the outer thin film layer, comprising purging the plasma chamber with pure silane gas, igniting the plasma and then introducing the gaseous mixture of silane and phosphine into the plasma chamber to complete the formation of the n+ layer.