The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 1989
Filed:
Jul. 29, 1987
George J Collins, Fort Collins, CO (US);
John R McNeil, Albuquerque, NM (US);
Zeng-gi Yu, Fort Collins, CO (US);
Other;
Abstract
A method for depositing and tailoring anisotropic properties of ceramic oxide superconductive films onto the outer surface of fibers, wires, rods, bars and onto the inner surface of tubes, as well as onto the surface of disc-shaped substrates, employs either tandem magnetron discharges alone or both an abnormal glow cold cathode electron gun together with tandem magnetron discharges. This deposition method provides uniform thin films having high growth rates, controllable stoichiometry and desired anisotropic microstructure. The magnetron cathodes are made from either mixtures or single elements of the metals. The oxygen component is achieved either from the cathode material itself or by reactive sputtering in an oxygen ambient or a post-deposition thermal or plasma oxidation. An external electron beam may also be used for in-situ annealing of the deposited films while placed under an external applied magnetic field to better align crystals in the films for the desired anisotropic superconducting properties. Thin metal or dielectric thin films are deposited as an interface layer and are placed both on the top of and under the metal oxide ceramic superconductive film material. Hermetic seal layers are deposited to protect the ceramic oxide superconductive films from being poisoned by foreign atoms.