The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 1989
Filed:
Oct. 22, 1987
Victor J Adams, Tempe, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method for forming a solid state semiconductor pressure sensor in which the pressure sensor element is protected from the ambient whose pressure is being measured by a combination of a pressure transfer medium and a thin covering membrane. The method includes applying the thin covering membrane so as to substantially avoid entrapment of air or formation of voids in the pressure transfer medium which would degrade the performance of the sensor. The pressure transfer medium is a gel-like material such as a silastic. The membrane is chosen to be substantially impermeable to the ambients being measured and sufficiently flexible to avoid attenuation of the input pressure signal. The membrane is cast in place by applying a thin liquid coating or a heat deformable film over the pressure transfer medium and then coverting it into a thin solid membrane stuck to the pressure transfer medium and the pressure sensor body.