The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 1989
Filed:
Feb. 11, 1988
Applicant:
Inventors:
Masahiko Kondow, Kokubunji, JP;
Shin Satoh, Iruma, JP;
Shigekazu Minagawa, Tokyo, JP;
Akio Ohishi, Tokyo, JP;
Takashi Kajimura, Tokyo, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 43 ; 357 16 ; 357 17 ; 357 61 ; 372 45 ;
Abstract
A semiconductor laser having a double hetero structure comprises a cladding layer of In.sub.1-x-y Ga.sub.x Al.sub.y P.sub.1-z As.sub.z (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.0.5, 0.5.ltoreq.x+y.ltoreq.1) and an active layer of a strained-layer-superlattice of In.sub.1-x-y Ga.sub.x Al.sub.y P.sub.1-z As.sub.z (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1, 0.ltoreq.x+y.ltoreq.1) system, thus enabling the lasing of wavelength ranges from infra-red to green.