The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 1989
Filed:
Jul. 28, 1988
Applicant:
Inventors:
Shuji Ikeda, Koganei, JP;
Satoshi Meguro, Hinode, JP;
Kotaro Nishimura, Kodaira, JP;
Sho Yamamoto, Kodaira, JP;
Nobuyoshi Tanimura, Musashino, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ; H03K / ; H01L / ;
U.S. Cl.
CPC ...
365154 ; 365156 ; 365190 ; 3072721 ; 357 235 ; 357 41 ;
Abstract
An SRAM including a memory cell having a high-resistance load element. The load element is formed from a polysilicon film, and an impurity is introduced into a least a part of the polysilicon film for the purpose of increasing the threshold voltage of a parasitic MISFET formed using the load element as its channel region. Alternatively, the deposition of the polysilicon film is carried out at a relatively high temperature, thereby preventing any increase in the current flowing through the load element, and thus reducing the power dissipation in the SRAM.