The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 1989
Filed:
Oct. 28, 1987
Motoo Nakano, Yokohama, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor photodetector device comprises an insulating gate field effect transistor having a gate in which a PN junction (J) is formed on an insulating layer. The gate is formed of a gate electrode (14) of P.sup.+ -type single crystalline silicon and a gate extension portion (17) of N.sup.+ -type single crystalline silicon. Electric charges generated by a light falling on an area including the PN junction are accummulated in the gate electrode (14). A signal of the accumulated electric charge is amplified by the transistor to obtain an output signal (V.sub.out) for detection.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile