The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 1989
Filed:
Sep. 09, 1987
Hitoshi Nakamura, Kanagawa, JP;
Shinji Sakano, Hachiouji, JP;
Hiroaki Inoue, Hachiouji, JP;
Toshio Katsuyama, Hachiouji, JP;
Hiroyoshi Matsumura, Saitama, JP;
Hitachi Cable, Ltd., Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A multi-quantum well structure which is formed by laminating thin semiconductor layers is provided with means for injecting carriers in a direction which is parallel to the surface of the laminated thin semiconductor layers, whereby it is possible to obtain satisfactory changes in refractive index of the carrier injection portion. For example, if the total reflection region of an optical switch consisting of optical waveguides which cross each other is provided with a multi-quantum well structure wherein carriers are injected in a direction parallel to the surface of the well, the extinction ratio characteristics of the device can be improved.