The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 1989
Filed:
Jan. 17, 1986
Takashi Shinoda, Kodaira, JP;
Kikuo Sakai, Hachiohji, JP;
Masahiro Ogata, Kodaira, JP;
Hiroshi Kawamoto, Kodaira, JP;
Yoshiaki Onishi, deceased, late of Kokubunji, JP;
by Junko Onishi, administratrix, Nagoya, JP;
Hitachi, Ltd., Tokyo, JP;
Hitachi Microcomputer Engineering Ltd., Tokyo, JP;
Abstract
A semiconductor memory includes a dummy cell for forming a reference potential, a read-only memory cell, and a differential amplifier circuit which receives the reference potential formed by the dummy cell and a signal read out from the memory cell. The differential amplifier circuit is dynamically operated so that the semiconductor memory is made smaller in power consumption and size than conventional units. Moreover, in order to reduce the power consumption, the memory cell is brought into the nonselection state when a predetermined time has passed after being selected. In addition, the semiconductor memory is provided with a compensating circuit in order to make the value of the capacitance connected to a word line for transmitting a selecting signal to the memory cell and the value of the capacitance connected to a dummy word line for transmitting a selecting signal to the dummy cell substantially equal to each other. Thus, the changes in potential of both the selecting signals are made substantially equal to each other. Accordingly, it is possible to reduce malfunctions.