The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 1989
Filed:
Mar. 11, 1988
Applicant:
Inventor:
Junko Akagi, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H03F / ;
U.S. Cl.
CPC ...
330302 ; 330296 ;
Abstract
A class C power amplifier has a heterojunction bipolar transistor as an element for amplifying an input signal. A d.c. bias voltage source, such as a d.c. battery, is connected to the transistor, such that a d.c. bias voltage lower than the turn-on voltage of the transistor is applied between the base and emitter of the bipolar transistor. An inductance coil is connected in series between the emitter of the transistor and the d.c. bias voltage source. Since the d.c. bias voltage is applied to the heterojunction bipolar transistor, the external drive voltage for activating the transistor is reduced to increase the high-frequency power gain of the amplifier.