The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 1989
Filed:
Mar. 30, 1988
William G Easter, Reading, PA (US);
Anatoly Feygenson, Reading, PA (US);
American Telephone and Telegraph Company, AT&T Technologies, Inc., Berkeley Heights, NJ (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
A method of fabricating a dielectrically-isolated structure is disclosed rein the structure includes a layer of silicide which is selectively doped, preferably using an ion implantation process. The doped silicide is then used as the diffusion source for the subsequent formation (through a heat treatment) of various active portions (collector, emitter, drain, source, for example) of a variety of high-voltage, high-speed active devices. The non-doped silicide is advantageously utilized as a low-resistance contact between the buried diffusion region and the surface electrode. In an alternative embodiment, bottom portions of the silicide contiguous to the tub are removed, leaving only vertical silicide portions adjacent to the sidewalls of the dielectrically isolated tub.