The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 1989
Filed:
Oct. 13, 1987
John W Tully, Rolling Hills Estates, CA (US);
Benedict B O'Brien, Manhattan Beach, CA (US);
William Hant, Los Angeles, CA (US);
King L Hu, Torrance, CA (US);
Northrop Corporation, Hawthrone, CA (US);
Abstract
A bipolar transistor is constructed to include a substrate, a collector layer epitaxial grown on the substrate and a base layer ion implanted in the collector layer. Next a further epitaxial layer is grown on the collector layer over the ion implanted base layer. A base contact region is ion implanted in this further epitaxial layer between the surface of this further layer and the base layer. The base contact region surrounds and defines an emitter in the further layer. A base ohmic contact is formed on the surface of the further layer in a location overlaying and contacting the base contact region. An emitter ohmic contact is also formed on the surface of the further layer in contact with the emitter. Additionally a collector ohmic contact is also formed on this same surface in a position isolated from the emitter by the base contact region. The collector ohmic makes an electrical contact with the collector by utilizing the further layer as a contact pathway.