The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 1989
Filed:
Apr. 28, 1987
Applicant:
Inventors:
Katsuji Nakagawa, Tokyo, JP;
Masaki Itoh, Tokyo, JP;
Akio Morimoto, Tokyo, JP;
Mitsuru Sakai, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B / ; G11B / ; G01D / ;
U.S. Cl.
CPC ...
428 64 ; 428 65 ; 428688 ; 428689 ; 428697 ; 428698 ; 428699 ; 428704 ; 428913 ; 428333 ; 428141 ; 369288 ; 346766 ; 3461351 ;
Abstract
An optical information recording medium according to the present invention is featured by its recording layer which contains a compound of tellurium (Te), selenium (Se) and nitrogen (N). The thickness of the recording layer 2 favorably ranges from about 100 angstroms (.ANG.) to about 1000 .ANG. and more favorably from 180 .ANG. to 400 .ANG.. The content of Se in the recording layer 2 favorably lies within a range from 2 to 40 atomic percent, more favorably from 10 to 30 atomic percent. The content of N is favorably to be from 2 to 20 atomic percent, and more favorably from 2 to 10 atomic percent.