The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 1989
Filed:
Feb. 09, 1987
Keiichi Noi, Kyoto, JP;
Akihiro Takami, Katano, JP;
Kazuhide Ebine, Katano, JP;
Kimiko Kumazawa, Ikoma, JP;
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Abstract
This is a voltage-dependent non-linear resistance ceramic composition wherein resistance of crystal is decreased by containing SrTiO.sub.3 as host material, and Nb.sub.2 O.sub.5 and Ta.sub.2 O.sub.5 as semiconductorization accelerating agent, and further by adding as additive one kind or more oxide of element selected from the group consisting of MnO.sub.2, Ga, Pt, Tl, Si, Ti, Li, La, Cu, Y, Cs, Au, Mo, S, Be, Al, Na, K, Ca, Cd, In, Ba, Pb, Eu, Gd, Tb, Tm, Lu, Th, Ir, Os, Hf, Ru, Mg, Zr, Sn, Sb and W, these additive is segregated at crystal granule boundaries, thereby making the crystal granule boundaries to high resistance. Accordingly, by the high resistance layer at the crystal boundaries the varistor characteristic is obtainable, and a capacitance characteristic is obtainable between the crystal granule-crystal granule boundary-crystal granule. From this, an element having both functions of the varistor characteristics and the capacitor characteristics are obtainable, and performs effect in surge absorption and noise elemination.