The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 1989
Filed:
Jul. 14, 1988
Jun-ichi Nishizawa, Miyagi, JP;
Hisao Kondoh, Osaka, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A double gate static induction thyristor comprises an n.sup.- semiconductor substrate having first and second principal surfaces opposite to each other. An n.sup.- epitaxial semiconductor layer is formed on the first principal surface of the substrate, and a p.sup.- epitaxial semiconductor layer is formed on the second principal surface of the substrate. A cathode electrode is deposited on the surface of the n.sup.- epitaxial layer, and an anode electrode is deposited on the surface of the p.sup.- epitaxial layer. In addition, a first gate electrode is formed on the first principal surface of the substrate, and a second gate electrode is formed on the second principal surface of the substrate.